Eiichiro Watanabe - Concepedia

Author

Eiichiro Watanabe

National Institute for Materials Science ORCID

Also Known As

E WATANABE, E Watanabe, E. Watanabe, Eiichiro WATANABE, Eiichiro Watanabe, Watanabe, E., Watanabe, Eiichiro

104

Publications

1.5K

Citations

H-Index

Concepts

All Affiliations

National Institute for Materials Science Wakayama University Kiryu University Gunma University NEC (Japan)

About

Eiichiro Watanabe is an author at National Institute for Materials Science specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	29	1.3K
2	Applied Physics	20	28	1.3K
3	Electrical Engineering	13	16	589
4	Chemistry	2	2	111
5	Biomedical Engineering	1	1	24

Eiichiro Watanabe

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
Suspended Single‐Crystal Diamond Nanowires for High‐Performance Nanoelectromechanical Switches Meiyong Liao, Shunichi Hishita, Eiichiro Watanabe, Advanced Materials Materials ScienceDiamond-like CarbonElectronic DevicesEngineeringElectronic Materials	2010	124
Low contact resistance metals for graphene based devices Eiichiro Watanabe, Arolyn Conwill, Daiju Tsuya, Diamond and Related Materials Materials ScienceGraphene NanomeshesEngineeringNanoelectronicsGraphene Fiber	2012	118
Production of Extended Single-Layer Graphene Mingsheng Xu, Daisuke Fujita, Keisuke Sagisaka, ACS Nano EngineeringGraphene NanomeshesGraphene-based Nano-antennasElectronic DevicesExtended Single-layer Graphene	2011	104
Graphene uniformly decorated with gold nanodots: in situ synthesis, enhanced dispersibility and applications Xi Yang, Mingsheng Xu, Weiming Qiu, Journal of Materials Chemistry NanosheetEngineeringChemistryGold NanodotsGraphene Nanomeshes	2011	101
Observation of the quantum valley Hall state in ballistic graphene superlattices Katsuyoshi Komatsu, Yoshifumi Morita, Eiichiro Watanabe, Science Advances	2018	98
Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors Jiangwei Liu, Meiyong Liao, Masataka Imura, Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringGate LengthLaalo3 Films	2013	87
Logic Circuits With Hydrogenated Diamond Field-Effect Transistors Jiangwei Liu, Hirotaka Ohsato, Meiyong Liao, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceComplementary Transistor ActionsExtrinsic Transconductance Maxima	2017	75
Bubble-Free Transfer Technique for High-Quality Graphene/Hexagonal Boron Nitride van der Waals Heterostructures Takuya Iwasaki, Kosuke Endo, Eiichiro Watanabe, ACS Applied Materials & Interfaces NanosheetEngineeringLow Dimensional MaterialGraphene NanomeshesGraphene-based Nano-antennas	2020	75
Coupled Quantum Dots in a Graphene-Based Two-Dimensional Semimetal Satoshi Moriyama, Daiju Tsuya, Eiichiro Watanabe, Nano Letters Electrical EngineeringGraphene Quantum DotEngineeringPhysicsNanoelectronics	2009	62
Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric Jiangwei Liu, Meiyong Liao, Masataka Imura, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringHydrogen-terminated Diamond Metal-oxide-semiconductorElectrical Characteristics	2013	59

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