J. U. Andersen

The use of channeling-effect techniques to locate interstitial foreign atoms in silicon

J. U. Andersen, O. Andreasen, John Davies et al. · Radiation Effects · 1971 · 126 citations

Lattice Location of Deuterium Interacting with the Boron Acceptor in Silicon

B. Bech Nielsen, J. U. Andersen, S. J. Pearton · Physical Review Letters · 1988 · 100 citations

Deuterium Interacting, Nuclear Physics, Engineering +18

Influence of lattice structure on motion of positrons and electrons through single crystals

E. Uggerhøj, J. U. Andersen · Canadian Journal of Physics · 1968 · 72 citations

Single Crystals, Emission Yield, Engineering +16

Use of the channeling technique to locate interstitial impurities

J. U. Andersen, E. Lægsgaard, L. C. Feldman · Radiation Effects · 1972 · 51 citations

Engineering, Analytical Instrumentation, Crystalline Defects +13

Measurements and Calculations of Critical Angles for Planar Channeling

S. T. Picraux, J. U. Andersen · Physical Review · 1969 · 33 citations

Engineering, Planar Channeling, Silicon On Insulator +16