Lattice Location of Deuterium Interacting with the Boron Acceptor in Silicon

Abstract

The lattice location of deuterium diffused into boron-doped silicon has been studied by means of channeling. After removal of a 0.2-\ensuremath{\mu}m-thick surface layer, it is found that 87% of the deuterium atoms occupy near-bond-center sites, whereas the remaining 13% are located close to tetrahedral sites. It is argued that the near-bond-center sites are related to boron-deuterium pairs, and the structure of these is discussed.