Nashrah Afroze

Statistics

Publications

Citations

138

H-Index

Active since

2022

Affiliations

Georgia Institute of Technology(Current)

Samsung (South Korea)

National Institute Of Technology Silchar

Nashrah Afroze is an author at Georgia Institute of Technology specializing in semiconductor devices, ferroelectric field-effect transistors, and materials science.

Publications per year

2022–2024

Publications

Experimental demonstration and modeling of a ferroelectric gate stack with a tunnel dielectric insert for NAND applications

Dipjyoti Das, Hyeonwoo Park, Zekai Wang et al. · 2023 · 53 citations

Engineering, Electrical Engineering, Materials Science +14

Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium–Zirconium Oxide-Based Metal–Oxide–Semiconductor Structures

Nujhat Tasneem, Harshil Kashyap, Kisung Chae et al. · ACS Applied Materials & Interfaces · 2022 · 26 citations

Engineering, Electrical Engineering, Materials Science +15

Material Choices for Tunnel Dielectric Layer and Gate Blocking Layer for Ferroelectric NAND Applications

Lance Fernandes, Prasanna Venkatesan Ravindran, Taeyoung Song et al. · IEEE Electron Device Letters · 2024 · 21 citations

Natural Sciences, Electrical Engineering, Materials Science +14

Machine Learning Assisted Statistical Variation Analysis of Ferroelectric Transistors: From Experimental Metrology to Predictive Modeling

Gihun Choe, Prasanna Venkatesan Ravindran, Anni Lu et al. · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022 · 17 citations

Engineering, Electrical Engineering, Materials Science +17

Disturb and its Mitigation in Ferroelectric Field-Effect Transistors With Large Memory Window for NAND Flash Applications

Prasanna Venkatesan, Chinsung Park, Taeyoung Song et al. · IEEE Electron Device Letters · 2024 · 11 citations

Engineering, Electrical Engineering, Materials Science +17

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