Hsuan-Ping Lee

Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations

Hsuan-Ping Lee, Joshua Perozek, Luciano Rosario et al. · Scientific Reports · 2016 · 118 citations · Full text

Reconfigurable liquid-core/liquid-cladding optical waveguides with dielectrophoresis-driven virtual microchannels on an electromicrofluidic platform

Shih‐Kang Fan, Hsuan-Ping Lee, Chia‐Chi Chien et al. · Lab on a Chip · 2016 · 27 citations

Waveguides, Optical Materials, Engineering +20

Improving Current ON/OFF Ratio and Subthreshold Swing of Schottky- Gate AlGaN/GaN HEMTs by Postmetallization Annealing

Hsuan-Ping Lee, C. Bayram · IEEE Transactions on Electron Devices · 2020 · 20 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

Systematic study of shockley-read-hall and radiative recombination in GaN on Al₂O₃, freestanding GaN, and GaN on Si

Jarod Meyer, Richard Liu, Richard D. Schaller et al. · Journal of Physics Photonics · 2020 · 17 citations · Full text

Semiconductors, Radiative Recombination, Electrical Engineering +14

Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(1 1 1) substrate

Joshua Perozek, Hsuan-Ping Lee, Bharat Krishnan et al. · Journal of Physics D Applied Physics · 2017 · 12 citations

Semiconductors, Electrical Characteristics, Electrical Engineering +12