A. Faigón

Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates

F. Campabadal, J.M. Rafı́, M. Zabala et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2011 · 56 citations

Engineering, Metal-insulator-semiconductor Structures, Silicon On Insulator +17

Extension of the Measurement Range of MOS Dosimeters Using Radiation Induced Charge Neutralization

A. Faigón, José Lipovetzky, E. Redín et al. · IEEE Transactions on Nuclear Science · 2008 · 36 citations

Engineering, Measurement, Radiation Protection +16

Electrically Erasable Metal–Oxide–Semiconductor Dosimeters

José Lipovetzky, E. Redín, A. Faigón · IEEE Transactions on Nuclear Science · 2007 · 34 citations

Electrical Engineering, Engineering, Erasable Metal–oxide–semiconductor Dosimeters +12

Spatial distribution of roots and nodules, and δ15N evidence of nitrogen fixation in Adesmia volckmanni, a Patagonian leguminous shrub

Rodolfo Á. Golluscio, A. Faigón, M. Tanke · Journal of Arid Environments · 2006 · 29 citations

Biology, Biogeochemistry, Engineering +14

Field Oxide n-channel MOS Dosimeters Fabricated in CMOS Processes

José Lipovetzky, M. Garcia–Inza, S. Carbonetto et al. · IEEE Transactions on Nuclear Science · 2013 · 28 citations

Low-power Electronics, Electrical Engineering, New Technique +14