I. G. Neizvestny

3D-model of epitaxial growth on porous {111} and {100} Si surfaces

I. G. Neizvestny, Nataliya L. Shwartz, Z. Sh. Yanovitskaya · Computer Physics Communications · 2002 · 37 citations

Materials Science, Surface Characterization, Engineering +6

Formation of GaAs nanostructures by droplet epitaxy—Monte Carlo simulation

Maxim A. Vasilenko, I. G. Neizvestny, Nataliya L. Shwartz · Computational Materials Science · 2015 · 29 citations

Semiconductors, Engineering, Gaas Nanostructures +5

Experimental studies in quantum cryptography

V. L. Kurochkin, Alexey Zverev, Yury Kurochkin et al. · Russian Microelectronics · 2011 · 17 citations

Simulated growth of GaAs nanowires: Catalytic and self-catalyzed growth

Maria V. Knyazeva, Alla G. Nastovjak, I. G. Neizvestny et al. · Semiconductors · 2015 · 12 citations

Simulation of surface relief effect on ALD process

I. G. Neizvestny, Nataliya L. Shwartz, Zoya Sh. Yanovitskaja et al. · Computational Materials Science · 2005 · 12 citations

Surface Relief Effect, Engineering, Surface Science +4