Ryan J. Gasvoda

Etch selectivity during plasma-assisted etching of SiO2 and SiN<i>x</i>: Transitioning from reactive ion etching to atomic layer etching

Ryan J. Gasvoda, Zhonghao Zhang, Scott Wang et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2020 · 75 citations

Engineering, Silicon On Insulator, Fluorocarbon Parent Gas +17

Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO₂

Ryan J. Gasvoda, Alex van de Steeg, Ranadeep Bhowmick et al. · ACS Applied Materials & Interfaces · 2017 · 61 citations

Surface prefunctionalization of SiO2 to modify the etch per cycle during plasma-assisted atomic layer etching

Ryan J. Gasvoda, Yuri G. P. Verstappen, Scott Wang et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2019 · 25 citations

Selective Gas-Phase Functionalization of SiO₂ and SiN<i>_x</i> Surfaces with Hydrocarbons

Ryan J. Gasvoda, Wanxing Xu, Zhonghao Zhang et al. · Langmuir · 2021 · 18 citations

Mechanism for growth initiation on aminosilane-functionalized SiO2 during area-selective atomic layer deposition of ZrO2

Wanxing Xu, Paul C. Lemaire, Kashish Sharma et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2021 · 16 citations

Engineering, Chemistry, Chemical Deposition +18