Timothy Jinsoo Yoo

Demonstration of 4.7 kV breakdown voltage in NiO/<b> <i>β</i> </b>-Ga2O3 vertical rectifiers

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia et al. · Applied Physics Letters · 2022 · 95 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +12

Breakdown up to 13.5 kV in NiO/β-Ga₂O₃ Vertical Heterojunction Rectifiers

Jian-Sian Li, Hsiao-Hsuan Wan, Chao-Ching Chiang et al. · ECS Journal of Solid State Science and Technology · 2024 · 58 citations · Full text

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +8

Annealing temperature dependence of band alignment of NiO/<i>β</i>-Ga₂O₃

Xinyi Xia, Jian-Sian Li, Chao-Ching Chiang et al. · Journal of Physics D Applied Physics · 2022 · 41 citations

Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3

Timothy Jinsoo Yoo, Xinyi Xia, F. Ren et al. · Applied Physics Letters · 2022 · 34 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Reproducible NiO/Ga2O3 Vertical Rectifiers with Breakdown Voltage &gt;8 kV

Jian-Sian Li, Hsiao-Hsuan Wan, Chao-Ching Chiang et al. · Crystals · 2023 · 21 citations · Full text

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +16