B. Lherron

A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

Kwangyou Seo, Bala Haran, Divya Gupta et al. · 2014 · 97 citations

Engineering, Vlsi Design, Finfet Technology +18

Tungsten and cobalt metallization: A material study for MOL local interconnects

V. Kamineni, M. Raymond, S. Siddiqui et al. · 2016 · 63 citations

Mol Local Interconnects, Engineering, Cvd W-based Metallization +21

UTBB FDSOI scaling enablers for the 10nm node

L. Grenouillet, Qinrang Liu, R. Wacquez et al. · 2013 · 29 citations

Engineering, Vlsi Design, Computer Architecture +19

FDSOI CMOS devices featuring dual strained channel and thin BOX extendable to the 10nm node

Q. Liu, B. DeSalvo, P. Morin et al. · 2014 · 29 citations

Engineering, Vlsi Design, Fdsoi Devices +16

Selective GeO<inf>x</inf>-scavenging from interfacial layer on Si<inf>1−x</inf>Ge<inf>x</inf> channel for high mobility Si/Si<inf>1−x</inf>Ge<inf>x</inf> CMOS application

C. H. Lee, H. Kim, P. Jamison et al. · 2016 · 12 citations