K. Yoshimatsu - Concepedia

Author

K. Yoshimatsu

Also Known As

K Yoshimatsu, K. YOSHIMATSU, K. Yoshimatsu, Kohei Yoshimatsu, Kouhei YOSHIMATSU, Kouhei Yoshimatsu, Yoshimatsu, K., Yoshimatsu, Kohei

Publications

Citations

H-Index

Concepts

All Affiliations

Tokyo Institute of Technology High Energy Accelerator Research Organization The University of Tokyo Tohoku University Japan Synchrotron Radiation Research Institute

About

K. Yoshimatsu is an author at Tokyo Institute of Technology specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	17	653
2	Applied Physics	15	16	636
3	Chemistry	5	5	166
4	Natural Sciences	2	2	166
5	Electrical Engineering	2	2	61

K. Yoshimatsu

Publications

Citations

H-Index

Page 1

	Year	Citations
Metallic Quantum Well States in Artificial Structures of Strongly Correlated Oxide K. Yoshimatsu, Koji Horiba, Hiroshi Kumigashira, Science Quantum LiquidEngineeringStrongly Correlated Electron SystemsUltrathin FilmsSemiconductor Nanostructures	2011	141
Superconductivity in Ti4O7 and γ-Ti3O5 films K. Yoshimatsu, Osami Sakata, Akira Ohtomo Scientific Reports	2017	63
Band alignment at <i>β</i>-(Al<i>x</i>Ga1−<i>x</i>)2O3/<i>β</i>-Ga2O3 (100) interface fabricated by pulsed-laser deposition Ryo Wakabayashi, Mai Hattori, K. Yoshimatsu, Applied Physics Letters Oxide HeterostructuresMaterials ScienceEpitaxial GrowthEngineeringOxide Electronics	2018	59
Oxygen-radical-assisted pulsed-laser deposition of β-Ga2O3 and β-(Al Ga1−)2O3 films Ryo Wakabayashi, Takayoshi Oshima, Mai Hattori, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringOxygen-radical-assisted Pulsed-laser DepositionApplied Physics	2015	57
Epitaxial structure and electronic property of <i>β</i>-Ga2O3 films grown on MgO (100) substrates by pulsed-laser deposition Ryo Wakabayashi, K. Yoshimatsu, Mai Hattori, Applied Physics Letters Twin-domain StructureEngineeringCrystal Growth TechnologyHeteroepitaxial GrowthElectronic Properties	2017	57
Competition between instabilities of Peierls transition and Mott transition in W-doped VO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>thin films Enju Sakai, K. Yoshimatsu, Keisuke Shibuya, Physical Review B	2011	56
Conducting Si-doped γ-Ga2O3 epitaxial films grown by pulsed-laser deposition Takayoshi Oshima, Keitaro Matsuyama, K. Yoshimatsu, Journal of Crystal Growth EngineeringPulsed-laser DepositionApplied PhysicsGallium OxideMolecular Beam Epitaxy	2015	54
Development of a versatile micro-focused angle-resolved photoemission\n spectroscopy system with Kirkpatrick-Baez mirror optics Miho Kitamura, S. Souma, Asuka Honma, arXiv (Cornell University)	2022	52
Formation of indium–tin oxide ohmic contacts for β-Ga<sub>2</sub>O<sub>3</sub> Takayoshi Oshima, Ryo Wakabayashi, Mai Hattori, Japanese Journal of Applied Physics Materials ScienceOxide HeterostructuresElectrical EngineeringWide-bandgap SemiconductorEngineering	2016	44
Microwave Effects on Co–Pi Cocatalysts Deposited on α-Fe<sub>2</sub>O<sub>3</sub> for Application to Photocatalytic Oxygen Evolution Masato M. Maitani, Takuya Yamada, Hisanori Mashiko, ACS Applied Materials & Interfaces	2017	42

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