Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

Luc Thomas, Guenole Jan, Huanlong Liu, +14

Journal of Applied Physics

Non-volatile MemoryEngineeringEmerging Memory TechnologyMagnetic ResonanceComputer Architecture +22

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

Tai Min, Qiang Chen, R. S. Beach, +14

IEEE Transactions on Magnetics

Non-volatile MemoryEngineeringEmerging Memory TechnologyMagnetic ResonanceComputer Architecture +18

High Spin Torque Efficiency of Magnetic Tunnel Junctions with MgO/CoFeB/MgO Free Layer

Guenole Jan, Yu-Jen Wang, Takahiro Moriyama, +6

Applied Physics Express

Spin TorqueMagnetic PropertiesEngineeringMagnetic ResonanceSpintronic Material +18

Demonstration of fully functional 8Mb perpendicular STT-MRAM chips with sub-5ns writing for non-volatile embedded memories

Guenole Jan, Luc Thomas, Son Le, +14

Non-volatile MemoryEngineeringEmerging Memory TechnologyMtj DesignComputer Architecture +16

Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications

Yu Lu, Tom Zhong, W.N. Hsu, +30

Non-volatile MemoryEnergy-efficient Iot ApplicationsEngineeringEmerging Memory TechnologyComputer Architecture +14

A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)

R. S. Beach, Tai Min, C. Horng, +32

EngineeringSpintronic MaterialSpin DynamicSpin PhenomenonMagnetoresistance +14

Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM

Luc Thomas, Guenole Jan, Son Le, +15

Device DiameterSpintronicsElectrical EngineeringInconsistent Size DependenceEngineering +11

Achieving Sub-ns switching of STT-MRAM for future embedded LLC applications through improvement of nucleation and propagation switching mechanisms

Guenole Jan, Luc Thomas, Son Le, +16

Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureLlc Applications +17

MRAM Co-designed Processing-in-Memory CNN Accelerator for Mobile and IoT Applications

Baohua Sun, Daniel Liu, Leo Yu, +4

arXiv (Cornell University)

Mram DensityElectrical EngineeringTechnologyEngineeringHardware Acceleration +13

Reliability study of perpendicular STT-MRAM as emerging embedded memory qualified for reflow soldering at 260°C

Meng-Chun Shih, Chia-Yu Wang, Yung-Huei Lee, +14

Reflow SolderingNon-volatile MemoryReliability StudyEngineeringEmerging Memory Technology +20