J. F. Walker

Tuning AlAs-GaAs band discontinuities and the role of Si-induced local interface dipoles

Lucia Sorba, Gvido Bratina, Giacomo Ceccone et al. · Physical review. B, Condensed matter · 1991 · 126 citations

Thin Ordered Layers, Wide-bandgap Semiconductor, Electrical Engineering +15

Determination of the (100) InAs/GaSb heterojunction valence-band discontinuity by x-ray photoemission core level spectroscopy

G. J. Gualtieri, G. P. Schwartz, Ralph G. Nuzzo et al. · Journal of Applied Physics · 1987 · 57 citations

Semiconductors, X-ray Spectroscopy, Engineering +14

Strong intermediate-state effects in exciton-mediated electronic intrasubband scattering in multiple-quantum-well structures

M. Berz, J. F. Walker, Paul von Allmen et al. · Physical review. B, Condensed matter · 1990 · 21 citations

Localized Excited State, Engineering, Magnetic Resonance +16

Frequency tuning of a double-heterojunction AlGaAs/GaAs-vertical-cavity surface-emitting laser by a serial integrated in-cavity modulator diode

Claire Gmachl, A. Köck, M. Rosenberger et al. · Applied Physics Letters · 1993 · 16 citations

Photonics, Engineering, Laser Science +13

Summary Abstract: Valence-band discontinuities in (100) GaSb/AlSb and GaSb/InAs heterojunctions

G. J. Gualtieri, Ralph G. Nuzzo, R. J. Malik et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1987 · 15 citations

Materials Science, Ii-vi Semiconductor, Engineering +14