Concepedia
Statistics
Publications
5
Citations
209
H-Index
Active since
2011
Affiliations
Aristotle University of Thessaloniki(Current)
University of Crete
FORTH Institute of Electronic Structure and Laser
Justus-Liebig-Universität Gießen
T. Koukoula is an author at Aristotle University of Thessaloniki specializing in materials science, applied physics, and engineering.
Top concepts
EngineeringApplied PhysicsMaterial SciencePhysicsNanotechnologySemiconductorsOptoelectronicsCrystalline DefectsThin FilmsQuantum Dots
Publications per year
2011–2016
Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy
Ž. Gačević, Aparna Das, J. Teubert et al. · Journal of Applied Physics · 2011 · 70 citations · Full text
Materials Science, Internal Quantum Efficiency, Photoluminescence +14
Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires
Th. Kehagias, G. P. Dimitrakopulos, Pascal Becker et al. · Nanotechnology · 2013 · 66 citations
Semiconductors, Materials Science, Wide-bandgap Semiconductor +12
Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy
J. Kruse, L. Lymperakis, S. Eftychis et al. · Journal of Applied Physics · 2016 · 38 citations
Engineering, Window Diameter, Mask Windows +20
Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires
S. Eftychis, J. Kruse, T. Koukoula et al. · Journal of Crystal Growth · 2016 · 22 citations
Materials Science, Wide-bandgap Semiconductor, Spontaneous Growth +5
Growth mechanism and microstructure of low defect density InN (0001) In-face thin films on Si (111) substrates
Th. Kehagias, G. P. Dimitrakopulos, A. O. Ajagunna et al. · Journal of Applied Physics · 2013 · 13 citations
Materials Science, Semiconductors, Epitaxial Growth +14
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