Pierre Saint‐Cast - Concepedia

Author

Pierre Saint‐Cast

Fraunhofer Institute for Solar Energy Systems ORCID

Also Known As

Beyer, W., Coeuret, F., Fell, A., Glatthaar, M., Glunz, S.W., Hofmann, M., Hong, J., Kania, D., Kohn, N., Meßmer, M.

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

Fraunhofer Institute for Solar Energy Systems University of Freiburg

About

Pierre Saint‐Cast is an author at Fraunhofer Institute for Solar Energy Systems specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	20	1K
2	Applied Physics	14	18	922
3	Natural Sciences	2	2	43
4	Biomedical Engineering	1	1	21
5	Chemistry	1	1	13

Pierre Saint‐Cast

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide Pierre Saint‐Cast, D. Kania, Marc Hofmann, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringSurface TechnologyAccumulation Layer	2009	239
High-Efficiency c-Si Solar Cells Passivated With ALD and PECVD Aluminum Oxide Pierre Saint‐Cast, Jan Benick, D. Kania, IEEE Electron Device Letters Aluminium NitrideEngineeringOrganic Solar CellReference CellsPhotovoltaic System	2010	150
Silicon Surface Passivation by Thin Thermal Oxide/PECVD Layer Stack Systems Sebastian Mack, Andreas Wolf, Christoph Brosinsky, IEEE Journal of Photovoltaics Materials EngineeringMaterials ScienceWafer Scale ProcessingEngineeringSilicon On Insulator	2011	86
Passivated emitter and rear cell—Devices, technology, and modeling R. Preu, Elmar Lohmüller, Sabrina Lohmüller, Applied Physics Reviews EngineeringEnergy EfficiencyEnergy ConversionOrganic Solar CellPhotovoltaic System	2020	65
Manufacturing 100-µm-thick silicon solar cells with efficiencies greater than 20% in a pilot production line Barbara Terheiden, Tabitha Ballmann, Renate Horbelt, physica status solidi (a)	2014	55
Postmetallization “Passivated Edge Technology” for Separated Silicon Solar Cells Puzant Baliozian, Mohammad Al-Akash, Elmar Lohmüller, IEEE Journal of Photovoltaics	2020	55
Properties of the c-Si/Al2O3 interface of ultrathin atomic layer deposited Al2O3 layers capped by SiNx for c-Si surface passivation D. Schuldis, Armin Richter, Jan Benick, Applied Physics Letters Aluminium NitrideUltrathin Al2o3 LayersEngineeringC-si/al2o3 InterfaceChemical Deposition	2014	49
Analysis of the losses of industrial‐type PERC solar cells Pierre Saint‐Cast, Sabrina Werner, Johannes Greulich, physica status solidi (a) EngineeringEnergy EfficiencyEnergy ConversionLoss AnalysisPhotovoltaic Devices	2016	49
High-temperature stability of c-Si surface passivation by thick PECVD Al2O3 with and without hydrogenated capping layers Pierre Saint‐Cast, D. Kania, R. Heller, Applied Surface Science Materials EngineeringMaterials ScienceC-si Surface PassivationEngineeringThick Pecvd Al2o3	2012	48
Variation of the layer thickness to study the electrical property of PECVD Al2O3 / c-Si interface Pierre Saint‐Cast, Youn-Ho Heo, E. Billot, Energy Procedia EngineeringIntegrated CircuitsSilicon On InsulatorSemiconductor DeviceSemiconductors	2011	45

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