Marc Hofmann - Concepedia

Author

Marc Hofmann

Fraunhofer Institute for Solar Energy Systems ORCID

Also Known As

Alemán, M., Billot, E., Bremen, B., Charpentier, C., Clement, C., Fallisch, A., Friedrich, L., Gautero, L., Haunschild, J., Hofmann, M.

148

Publications

1.9K

Citations

H-Index

103

Concepts

All Affiliations

Fraunhofer Institute for Solar Energy Systems University of Freiburg University of Cyprus

About

Marc Hofmann is an author at Fraunhofer Institute for Solar Energy Systems specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	33	1.4K
2	Applied Physics	18	27	1.1K
3	Natural Sciences	3	3	65
4	Chemical Engineering	3	3	139
5	Chemistry	3	3	130

Marc Hofmann

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide Pierre Saint‐Cast, D. Kania, Marc Hofmann, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringSurface TechnologyAccumulation Layer	2009	239
High-Efficiency c-Si Solar Cells Passivated With ALD and PECVD Aluminum Oxide Pierre Saint‐Cast, Jan Benick, D. Kania, IEEE Electron Device Letters Aluminium NitrideEngineeringOrganic Solar CellReference CellsPhotovoltaic System	2010	150
New water-soluble photo crosslinkable polymers based on modified poly(vinyl alcohol) A. Mühlebach, C. Pharisa, Marc Hofmann, Journal of Polymer Science Part A Polymer Chemistry EngineeringResponsive PolymersPolyelectrolyte GelChemistryModified Poly	1997	95
Silicon Surface Passivation by Thin Thermal Oxide/PECVD Layer Stack Systems Sebastian Mack, Andreas Wolf, Christoph Brosinsky, IEEE Journal of Photovoltaics Materials EngineeringMaterials ScienceWafer Scale ProcessingEngineeringSilicon On Insulator	2011	86
Surface passivation of crystalline silicon by plasma-enhanced chemical vapor deposition double layers of silicon-rich silicon oxynitride and silicon nitride J. Seiffe, L. Gautero, Marc Hofmann, Journal of Applied Physics Paramagnetic ResonanceEngineeringOptoelectronic DevicesSilicon On InsulatorPhotovoltaics	2011	63
Recent developments in rear-surface passivation at Fraunhofer ISE Marc Hofmann, S. Janz, Christian Schmidt, Solar Energy Materials and Solar Cells Materials EngineeringEngineeringSurface AnalysisSurface ScienceApplied Physics	2009	63
Efficient algorithms for computing the best subset regression models for large-scale problems Marc Hofmann, Cristian Gatu, Erricos John Kontoghiorghes Computational Statistics & Data Analysis Model OptimizationLarge-scale Global OptimizationEngineeringHigh-dimensional MethodData Mining	2007	60
High-temperature stability of c-Si surface passivation by thick PECVD Al2O3 with and without hydrogenated capping layers Pierre Saint‐Cast, D. Kania, R. Heller, Applied Surface Science Materials EngineeringMaterials ScienceC-si Surface PassivationEngineeringThick Pecvd Al2o3	2012	48
Variation of the layer thickness to study the electrical property of PECVD Al2O3 / c-Si interface Pierre Saint‐Cast, Youn-Ho Heo, E. Billot, Energy Procedia EngineeringIntegrated CircuitsSilicon On InsulatorSemiconductor DeviceSemiconductors	2011	45
Phosphorus-doped SiC as an excellent p-type Si surface passivation layer S. Janz, Stephan Riepe, Marc Hofmann, Applied Physics Letters EngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On InsulatorSemiconductor Device	2006	35

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