Marc Hofmann

Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide

Pierre Saint‐Cast, D. Kania, Marc Hofmann et al. · Applied Physics Letters · 2009 · 239 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +15

High-Efficiency c-Si Solar Cells Passivated With ALD and PECVD Aluminum Oxide

Pierre Saint‐Cast, Jan Benick, D. Kania et al. · IEEE Electron Device Letters · 2010 · 150 citations

Aluminium Nitride, Engineering, Organic Solar Cell +17

New water-soluble photo crosslinkable polymers based on modified poly(vinyl alcohol)

A. Mühlebach, C. Pharisa, Marc Hofmann et al. · Journal of Polymer Science Part A Polymer Chemistry · 1997 · 95 citations

Engineering, Responsive Polymers, Polyelectrolyte Gel +21

Silicon Surface Passivation by Thin Thermal Oxide/PECVD Layer Stack Systems

Sebastian Mack, Andreas Wolf, Christoph Brosinsky et al. · IEEE Journal of Photovoltaics · 2011 · 86 citations

Materials Engineering, Materials Science, Wafer Scale Processing +14

Surface passivation of crystalline silicon by plasma-enhanced chemical vapor deposition double layers of silicon-rich silicon oxynitride and silicon nitride

J. Seiffe, L. Gautero, Marc Hofmann et al. · Journal of Applied Physics · 2011 · 63 citations

Paramagnetic Resonance, Engineering, Optoelectronic Devices +22