Emil Pinčík

Reactivity of Au with ultrathin Si layers: A photoemission study

J. Ivančo, Hikaru Kobayashi, J. Almeida et al. · Journal of Applied Physics · 2001 · 137 citations · Full text

Materials Science, Semiconductors, Ultrathin Si Layers +14

FT IR spectroscopy of silicon oxide layers prepared with perchloric acid

Martin Kopáni, Milan Mikula, Masatoshi Takahashi et al. · Applied Surface Science · 2012 · 42 citations

Engineering, Infrared Sensor, Natural Sciences +10

Evidence for the Improved Defect-Pool Model for Gap States in Amorphous Silicon from Charge DLTS Experiments on Undoped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="italic">a</mml:mi></mml:math>-Si:H

Vojtěch Nádaždy, R. Durný, Emil Pinčík · Physical Review Letters · 1997 · 38 citations

Engineering, Charge Dlts Technique, Defect Tolerance +17

Coplanar and non-coplanar x-ray reflectivity characterization of lateral W/Si multilayer gratings

M. Jergel, Tilo Baumbach, E. Majková et al. · Journal of Physics D Applied Physics · 2001 · 34 citations

Complete optical characterization of the SiO ₂ /Si system by spectroscopic ellipsometry, spectroscopic reflectometry and atomic force microscopy

Daniel Franta, Emil Pinčík, Miloslav Ohlídal · Surface and Interface Analysis · 1999 · 26 citations