J. Fulford

Statistics

Publications

Citations

398

H-Index

Active since

1995

Affiliations

Advanced Micro Devices (United States)(Current)

The University of Texas at Austin

Ocean Acoustical Services and Instrumentation Systems (United States)

Massachusetts Institute of Technology

Woods Hole Oceanographic Institution

J. Fulford is an author at Advanced Micro Devices (United States) specializing in semiconductor materials, semiconductor devices, and materials science.

Publications per year

1995–2003

Publications

Effects of chemical composition on the electrical properties of NO-nitrided SiO2

Mohsin Ahmad Bhat, D. Wristers, Jason Yan et al. · Applied Physics Letters · 1995 · 98 citations

Engineering, Electrical Engineering, Materials Science +17

Degradation of oxynitride gate dielectric reliability due to boron diffusion

D. Wristers, T. Chen, H. H. Wang et al. · Applied Physics Letters · 1996 · 92 citations

Engineering, Electrical Engineering, Materials Science +17

Polarity dependence of dielectric breakdown in scaled SiO/sub 2/

Mohsin Ahmad Bhat, D. Wristers, J. Fulford et al. · 2002 · 53 citations

Engineering, Materials Science, Physics +17

Correlation of dielectric breakdown with hole transport for ultrathin thermal oxides and N2O oxynitrides

Mingang Hao, W.-M. Chen, K. Lai et al. · Applied Physics Letters · 1995 · 32 citations

Engineering, Materials Engineering, Materials Science +17

Performance and reliability assessment of dual-gate CMOS devices with gate oxide grown on nitrogen implanted Si substrates

Y.Y. Chen, I.M. Liu, Mark Gardner et al. · 2002 · 29 citations

Engineering, Electrical Engineering, Microelectronics +16

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