Vincent M. Abate

Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions

Luke Yates, Brendan Gunning, Mary H. Crawford et al. · IEEE Transactions on Electron Devices · 2022 · 61 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

AlGaN polarization-doped field effect transistor with compositionally graded channel from Al0.6Ga0.4N to AlN

Andrew Armstrong, Brianna Klein, Albert G. Baca et al. · Applied Physics Letters · 2019 · 39 citations

Engineering, Electrical Engineering, Materials Science +17

Ultra-wide band gap AlGaN polarization-doped field effect transistor

Andrew Armstrong, Brianna Klein, Albert Colón et al. · Japanese Journal of Applied Physics · 2018 · 36 citations

Engineering, Electrical Engineering, Materials Science +17

Planar Ohmic Contacts to Al_0.45Ga_0.55N/Al_0.3Ga_0.7N High Electron Mobility Transistors

Brianna Klein, Albert G. Baca, Andrew Armstrong et al. · ECS Journal of Solid State Science and Technology · 2017 · 30 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment

Brianna Klein, E Douglas, Andrew Armstrong et al. · Applied Physics Letters · 2019 · 26 citations · Full text

Engineering, Electrical Engineering, Materials Science +17