François Boige

Physical Origin of the Gate Current Surge During Short-Circuit Operation of SiC MOSFET

François Boige, David Trémouilles, Frédéric Richardeau · IEEE Electron Device Letters · 2019 · 38 citations

Engineering, Electrical Engineering, Microelectronics +14

Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation

François Boige, Frédéric Richardeau, Sébastien Lefebvre et al. · Microelectronics Reliability · 2018 · 37 citations

Engineering, Electrical Engineering, Electronic Materials +15

Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

François Boige, Frédéric Richardeau, David Trémouilles et al. · Microelectronics Reliability · 2017 · 35 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +14

Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation

François Boige, Frédéric Richardeau · Microelectronics Reliability · 2017 · 30 citations · Full text

Engineering, Electrical Engineering, Microelectronics +15

SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation

François Boige, Frédéric Richardeau, S. Lefebvre et al. · Mathematics and Computers in Simulation · 2018 · 20 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16