J.M. Gladstone

GaAs FET's with a flicker-noise corner below 1 MHz

B. Hughes, N.G. Fernandez, J.M. Gladstone · IEEE Transactions on Electron Devices · 1987 · 60 citations

Engineering, Electrical Engineering, Microelectronics +16

Photoluminescence of carbon-implanted GaAs

G. B. Stringfellow, W. Koschel, F. Briones et al. · Applied Physics Letters · 1981 · 48 citations

Engineering, Materials Engineering, Materials Science +16

Formation of heavily doped n-type layers in GaAs by multiple ion implantation

E. B. Stoneham, G. A. Patterson, J.M. Gladstone · Journal of Electronic Materials · 1980 · 18 citations

Engineering, Materials Science, Physics +14

Fully ion implanted GaAs power FETs

E. B. Stoneham, Tianhao Tan, J.M. Gladstone · 1977 · 11 citations

Engineering, Electrical Engineering, Materials Science +17