M. Scheffler - Concepedia

Author

M. Scheffler

Fritz Haber Institute of the Max Planck Society ORCID

Also Known As

M Scheffler, M. Scheffler, Martha Scheffler, Martina Scheffler, Scheffler, M., Van de Walle, Chris G.

Publications

1.8K

Citations

H-Index

Concepts

All Affiliations

Fritz Haber Institute of the Max Planck Society Leibniz Institute for Solid State and Materials Research Technische Universität Dresden University of Duisburg-Essen

About

M. Scheffler is an author at Fritz Haber Institute of the Max Planck Society specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	12	1K
2	Applied Physics	11	11	1K
3	Natural Sciences	4	4	615
4	Chemistry	3	3	445
5	Electrical Engineering	2	2	43

M. Scheffler

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
GaAs equilibrium crystal shape from first principles Nikolaj Moll, Alexander Kley, E. Pehlke, Physical review. B, Condensed matter EngineeringSurface EnergiesEnergy Density FormalismCrystal Growth TechnologyChemistry	1996	400
Effect of the cluster size in modeling the H2 desorption and dissociative adsorption on Si(001) Evgeni S. Penev, Peter Kratzer, M. Scheffler The Journal of Chemical Physics	1999	165
Role of Electronic Correlation in the Si(100) Reconstruction: A Quantum Monte Carlo Study S.B. Healy, Claudia Filippi, Peter Kratzer, Physical Review Letters Quantum ScienceEngineeringQuantum ComputingPhysicsElectronic Correlation	2001	151
Step-flow growth in homoepitaxy of <b>β</b>-Ga2O3 (100)—The influence of the miscut direction and faceting Robert Schewski, Konstantin Lion, Andreas Fiedler, APL Materials Materials ScienceOxide HeterostructuresEngineeringCrystalline DefectsCrystal Growth Technology	2018	120
Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots R. Santoprete, Belita Koiller, Rodrigo B. Capaz, Physical review. B, Condensed matter	2003	92
Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations Peter Kratzer, Evgeni S. Penev, M. Scheffler Applied Surface Science First-principles CalculationsEngineeringPhysicsIngaas Thin FilmsApplied Physics	2003	78
Analytic many-body potential for InAs/GaAs surfaces and nanostructures: Formation energy of InAs quantum dots Thomas Hammerschmidt, Peter Kratzer, M. Scheffler Physical Review B EngineeringAnalytic Many-body PotentialSemiconductor NanostructuresSemiconductorsIi-vi Semiconductor	2008	61
A kinetic Monte Carlo investigation of island nucleation and growth in thin-film epitaxy in the presence of substrate-mediated interactions Kristen A. Fichthorn, Michael L. Merrick, M. Scheffler Applied Physics A Thin-film EpitaxyEngineeringPhysicsSurface ScienceApplied Physics	2002	57
Model for nucleation in GaAs homoepitaxy derived from first principles Peter Kratzer, C. G. Morgan, M. Scheffler Physical review. B, Condensed matter SemiconductorsTotal EnergyEngineeringPhysicsCrystalline Defects	1999	51
Elastic response of cubic crystals to biaxial strain: Analytic results and comparison to density functional theory for InAs Thomas Hammerschmidt, Peter Kratzer, M. Scheffler Physical Review B Materials ScienceNonlinear ElasticityEngineeringPhysicsElasticity (Physics)	2007	41

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