Publication | Open Access
GaAs equilibrium crystal shape from first principles
400
Citations
50
References
1996
Year
EngineeringSurface EnergiesEnergy Density FormalismCrystal Growth TechnologyChemistrySemiconductorsIi-vi SemiconductorEquilibrium Crystal ShapeQuantum MaterialsSurface ReconstructionPhysicsPhysical ChemistrySemiconductor MaterialQuantum ChemistryCrystallographySolid-state PhysicNatural SciencesFirst PrinciplesSurface ScienceApplied PhysicsCondensed Matter PhysicsSurface Analysis
Surface energies for different GaAs surface orientations have been calculated as a function of the chemical potential. We use an energy density formalism within the first-principles pseudopotential density-functional approach. The equilibrium crystal shape has been derived from the surface energies for the (110), (100), (111), and (1\ifmmode\bar\else\textasciimacron\fi{} 1\ifmmode\bar\else\textasciimacron\fi{} 1\ifmmode\bar\else\textasciimacron\fi{}) orientations. Under As-rich conditions all four considered surface orientations exist in thermodynamic equilibrium, in agreement with experimental observations. Moreover, our calculations allow us to decide on previous contradictory theoretical values for the surface energies of the (111) and (1\ifmmode\bar\else\textasciimacron\fi{} 1\ifmmode\bar\else\textasciimacron\fi{} 1\ifmmode\bar\else\textasciimacron\fi{}) facets. \textcopyright{} 1996 The American Physical Society.
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