Moosung Kim

A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput

Seungjae Lee, Chulbum Kim, Minsu Kim et al. · 2018 · 104 citations

Engineering, Emerging Memory Technology, Computer Architecture +17

19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming

Ki‐Tae Park, Jin-Man Han, Daehan Kim et al. · 2014 · 96 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +19

11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory

Chulbum Kim, Ji-Ho Cho, Woopyo Jeong et al. · 2017 · 84 citations

Hardware Security, 3D Ic Architecture, Electrical Engineering +15

A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology

Daeyeal Lee, Ik‐Joon Chang, Sang-Yong Yoon et al. · 2012 · 48 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +11

A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface

Moosung Kim, Sung Won Yun, Jungjune Park et al. · 2022 IEEE International Solid- State Circuits Conference (ISSCC) · 2022 · 45 citations

Non-volatile Memory, Engineering, Vlsi Design +16