D. Jousse

Statistics

Publications

Citations

630

H-Index

Active since

1980

Affiliations

Centre National de la Recherche Scientifique(Current)

IBM Research - Thomas J. Watson Research Center

Technicolor (France)

IBM (United States)

D. Jousse is an author at Centre National de la Recherche Scientifique specializing in materials science, semiconductor physics, and semiconductor materials.

Publications per year

1980–1991

Publications

Recombination at dangling bonds and steady-state photoconductivity in<i>a</i>-Si:H

F. Vaillant, D. Jousse · Physical review. B, Condensed matter · 1986 · 94 citations

Natural Sciences, Materials Science, Physics +15

Electron-spin-resonance study of defects in plasma-enhanced chemical vapor deposited silicon nitride

D. Jousse, Jerzy Kanicki, D. T. Krick et al. · Applied Physics Letters · 1988 · 54 citations

Natural Sciences, Materials Engineering, Materials Science +17

Determination of the electronic density of states in hydrogenated amorphous silicon (a-SiH) from Schottky diode capacitance-voltage and conductance-voltage measurements

Pierre Viktorovitch, D. Jousse · Journal of Non-Crystalline Solids · 1980 · 52 citations

Engineering, Materials Engineering, Materials Science +16

Observation of multiple silicon dangling bond configurations in silicon nitride

D. Jousse, Jerzy Kanicki, J. H. Stathis · Applied Physics Letters · 1989 · 50 citations

Natural Sciences, Materials Science, Physics +17

Highly conductive and transparent amorphous tin oxide

D. Jousse, Carlos José Leopoldo Constantino, I. Chambouleyron · Journal of Applied Physics · 1983 · 44 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

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