R. F. DeKeersmaecker

Electron trapping and detrapping characteristics of arsenic-implanted SiO2 layers

R. F. DeKeersmaecker, D. J. DiMaria · Journal of Applied Physics · 1980 · 71 citations

Engineering, Optoelectronic Devices, Integrated Circuits +18

Trap generation and electron detrapping in SiO2 during high-field stressing of metal-oxide-semiconductor structures

Marc Heyns, R. F. DeKeersmaecker, M.W. Hillen · Applied Physics Letters · 1984 · 44 citations

Engineering, High-field Stressing, Additional Charge Distribution +17

Hole trapping in the bulk of SiO2 layers at room temperature

R. F. DeKeersmaecker, D. J. DiMaria · Journal of Applied Physics · 1980 · 36 citations

Engineering, Semiconductor Materials, Optoelectronic Devices +19

X and K band ESR study of the Pb Interface centres in thermally oxidized p-type (001)Si wafers at low temperatures and influence of medium-dose As+ ion implantation

A. Stesmans, Johan Braet, J. Witters et al. · Surface Science · 1984 · 35 citations

Materials Science, Ion Implantation, Pb Interface +8

A silicon bipolar transistor with a hydrogenated amorphous emitter

M Ghannam, Johan Nijs, R. Mertens et al. · 1984 · 21 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10