T. Hopf

Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ions

David N. Jamieson, Chih Hwan Yang, T. Hopf et al. · Applied Physics Letters · 2005 · 199 citations

Engineering, Electrical Engineering, Materials Science +10

Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

Hans Mertens, R. Ritzenthaler, Adrian Chasin et al. · 2016 · 161 citations

Engineering, Electrical Engineering, Materials Science +17

First Monolithic Integration of 3D Complementary FET (CFET) on 300mm Wafers

S. Subramanian, M. Reza Hosseini, T. Chiarella et al. · 2020 · 119 citations

Engineering, Electrical Engineering, Microelectronics +16

Size-controlled synthesis and gas sensing application of tungsten oxide nanostructures produced by arc discharge

Fang Fang, J. Kennedy, J. Futter et al. · Nanotechnology · 2011 · 83 citations

Natural Sciences, Materials Engineering, Materials Science +17

Charge State Control and Relaxation in an Atomically Doped Silicon Device

S. E. Andresen, R. Brenner, Cameron Wellard et al. · Nano Letters · 2007 · 55 citations

Engineering, Materials Science, Physics +15