José M. Tirado

Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices

José M. Tirado, J. L. Sánchez-Rojas, I. Izpura · IEEE Transactions on Electron Devices · 2007 · 230 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With $ \hbox{Al}_{2}\hbox{O}_{3}$ Passivation

Jin Wook Chung, Omair I. Saadat, José M. Tirado et al. · IEEE Electron Device Letters · 2009 · 80 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Simulation of surface state effects in the transient response of AlGaN/GaN HEMT and GaN MESFET devices

José M. Tirado, J. L. Sánchez-Rojas, I. Izpura · Semiconductor Science and Technology · 2006 · 30 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +15

2D simulation of static surface states in AlGaN/GaN HEMT and GaN MESFET devices

José M. Tirado, J. L. Sánchez-Rojas, I. Izpura · Semiconductor Science and Technology · 2005 · 18 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

Numerical simulation and compact modelling of AlGaN/GaN HEMTs with mitigation of self‐heating effects by substrate materials

R. Rodríguez, B. González, J. García et al. · physica status solidi (a) · 2015 · 10 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +15