S. Ae

Wavelength-selectable microarray light sources for S-, C-, and L-band WDM systems

H. Hatakeyama, K. Naniwae, Koji Kudo et al. · IEEE Photonics Technology Letters · 2003 · 33 citations

Free-space Optical Network, Photonics, Engineering +12

Low threshold λ = 1.3 μm multi-quantum well laser diodes grown by metalorganic vapor phase epitaxy using tertiarybutylarsine and tertiarybutylphosphine precursors

S. Ae, T. Terakado, Takahiro Nakamura et al. · Journal of Crystal Growth · 1994 · 32 citations

Photonics, Photoluminescence, Engineering +8

Submilliamp threshold 1.3 µm strained MQWlasers with novel <i>p</i> -substrateburied-heterostructure grown by MOVPE using TBA and TBP

T. Terakado, K. Tsuruoka, Toshinori Ishida et al. · Electronics Letters · 1995 · 25 citations

Selective MOVPE growth of InGaAsP and InGaAs using TBA and TBP

Y Sakata, Takahiro Nakamura, S. Ae et al. · Journal of Electronic Materials · 1996 · 24 citations

Selective Movpe Growth, Engineering, Biotechnology +1

Wavelength-Selectable Light Sources Fabricated Using Advanced Microarray-Selective Epitaxy

Kenichiro Yashiki, K. Sato, T. Morimoto et al. · IEEE Photonics Technology Letters · 2004 · 23 citations

Photonics, Advanced Microarray-selective Epitaxy, Engineering +13