Low threshold λ = 1.3 μm multi-quantum well laser diodes grown by metalorganic vapor phase epitaxy using tertiarybutylarsine and tertiarybutylphosphine precursors

Electron mobility and free-carrier absorption in InP; determination of the compensation ratio

W. Walukiewicz, J. Łagowski, L. Jastrzȩbski et al. · Journal of Applied Physics · 1980 · 333 citations

Natural Sciences, Materials Science, Physics +17

Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers

P.M. Ilroy, A. Kurobe, Yuki Uematsu · IEEE Journal of Quantum Electronics · 1985 · 281 citations

Engineering, Electrical Engineering, Physics +17

Use of tertiarybutylarsine for GaAs growth

C. H. Chen, C.A. Larsen, G. B. Stringfellow · Applied Physics Letters · 1987 · 128 citations

Engineering, Materials Engineering, Materials Science +17

A New Method for Growing GaAs Epilayers by Low Pressure Organometallics

J.P. Duchemin, Muriel Bonnet, F. Koelsch et al. · Journal of The Electrochemical Society · 1979 · 105 citations

Engineering, Materials Engineering, Materials Science +17

Use of tertiarybutylphosphine for the growth of InP and GaAs1-xPx

C. H. Chen, Dezhong Cao, G. B. Stringfellow · Journal of Electronic Materials · 1988 · 76 citations

Engineering, Materials Engineering, Materials Science +10