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Low threshold λ = 1.3 μm multi-quantum well laser diodes grown by metalorganic vapor phase epitaxy using tertiarybutylarsine and tertiarybutylphosphine precursors

PhotonicsPhotoluminescenceEngineeringLaser ScienceSemiconductor LasersApplied PhysicsLaser MaterialTertiarybutylphosphine PrecursorsμM Multi-quantumMolecular Beam EpitaxyCompound Semiconductor