R. Rudolph - Concepedia

Author

R. Rudolph

Technical University of Darmstadt

Also Known As

R Rudolph, R. Rudolph, R. W. Rudolph, Reiner Rudolph, Rudolph, R., Rudolph, Reiner

Publications

213

Citations

H-Index

Concepts

All Affiliations

Technical University of Darmstadt Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute

About

R. Rudolph is an author at Technical University of Darmstadt specializing in engineering, applied physics, and surface science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	146
2	Applied Physics	6	6	105
3	Health Sciences	1	1	29
4	Natural Sciences	1	1	41
5	Biomolecular Engineering	1	1	29

R. Rudolph

Publications

175

Citations

H-Index

Page 1

	Year	Citations
Deltahedral and deltahedral-fragment thiaboranes with 12-, 11-, 10-, and 9-vertex frameworks, their syntheses and characterization W. R. Pretzer, R. Rudolph Journal of the American Chemical Society Materials ScienceInorganic ChemistryMolecular SciencesEngineeringDeltahedral-fragment Thiaboranes	1976	41
Formulation of proteins in vacuum-dried glasses. I: Improved vacuum-drying of sugars using crystallising amino acids Markus Mattern, Gerhard Winter, R. Rudolph, European Journal of Pharmaceutics and Biopharmaceutics Food ChemistryAmino AcidsFood TechnologyVacuum-dried GlassesProtein Engineering	1997	29
Perspectives of the concept of van der Waals epitaxy: growth of lattice mismatched GaSe(0001) films on Si(111), Si(110) and Si(100) Wolfram Jaegermann, R. Rudolph, Andreas Klein, Thin Solid Films Materials ScienceMaterials EngineeringIi-vi SemiconductorEngineeringSurface Science	2000	23
Chemical passivation of Si(111) capped by a thin GaSe layer R. Rudolph, C. Pettenkofer, Andreas Klein, Applied Surface Science Surface CharacterizationEngineeringChemical PassivationSurface ScienceApplied Physics	2000	20
Electronic structure of the Si(1 1 1):GaSe van der Waals-like surface termination R. Rudolph, C. Pettenkofer, Aaron Bostwick, New Journal of Physics Optical MaterialsEngineeringOptoelectronic DevicesChemistrySilicon On Insulator	2005	19
Electronic passivation of Si(111) by Ga–Se half-sheet termination Rainer Fritsche, Elmar Wisotzki, A.B.M.O. Islam, Applied Physics Letters SemiconductorsMaterials ScienceSurface CharacterizationSemiconductor TechnologyEngineering	2002	17
Preparation of a Si():GaSe van der Waals surface termination by selenization of a monolayer Ga on Si() Rainer Fritsche, Elmar Wisotzki, Andreas Thißen, Surface Science Materials ScienceMaterials EngineeringSurface CharacterizationEngineeringSurface Chemistry	2002	16
Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110) R. Rudolph, Y. Tomm, C. Pettenkofer, Applied Physics Letters Materials ScienceSemiconductorsLeed PatternsIi-vi SemiconductorEngineering	2000	10

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