Livio Lattanzio - Concepedia

Author

Livio Lattanzio

École Polytechnique Fédérale de Lausanne

Also Known As

L. Lattanzio, LATTANZIO, Livio, Lattanzio, Livio, Livio Lattanzio

Publications

812

Citations

H-Index

Concepts

All Affiliations

École Polytechnique Fédérale de Lausanne École Normale Supérieure - PSL University of Udine IBM Research - Zurich

About

Livio Lattanzio is an author at École Polytechnique Fédérale de Lausanne specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	16	764
2	Applied Physics	14	16	764
3	Electrical Engineering	13	14	652
4	Natural Sciences	3	3	60
5	Civil Engineering	1	1	46

Livio Lattanzio

Publications

764

Citations

H-Index

Page 1

	Year	Citations
Complementary Germanium Electron–Hole Bilayer Tunnel FET for Sub-0.5-V Operation Livio Lattanzio, Luca De Michielis, Adrian M. Ionescu IEEE Electron Device Letters Categoryquantum ElectronicsEngineeringSemiconductor DeviceSemiconductorsElectronic Devices	2011	115
The electron–hole bilayer tunnel FET Livio Lattanzio, Luca De Michielis, Adrian M. Ionescu Solid-State Electronics EngineeringTunneling MicroscopyPhysicsNanoelectronicsApplied Physics	2012	101
Understanding the Superlinear Onset of Tunnel-FET Output Characteristic Luca De Michielis, Livio Lattanzio, Adrian M. Ionescu IEEE Electron Device Letters Electrical EngineeringEngineeringTunneling MicroscopyPhysicsTunnel Fets	2012	100
The Hysteretic Ferroelectric Tunnel FET Adrian M. Ionescu, Livio Lattanzio, Giovanni A. Salvatore, IEEE Transactions on Electron Devices Electrical EngineeringElectronic DevicesFerroelectric Tunnel FetsEngineeringFerroelectric Application	2010	57
Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current Livio Lattanzio, Luca De Michielis, Adrian M. Ionescu Device ModelingSemiconductor TechnologyElectrical EngineeringElectronic DevicesElectron-hole Bilayer Tfet	2011	55
Quantum Mechanical Study of the Germanium Electron–Hole Bilayer Tunnel FET Cem Alper, Livio Lattanzio, Luca De Michielis, IEEE Transactions on Electron Devices Categoryquantum ElectronicsEngineeringQuantum EngineeringSemiconductor DeviceSemiconductors	2013	47
Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior? Luca De Michielis, Livio Lattanzio, Kirsten E. Moselund, IEEE Electron Device Letters Electrical EngineeringEngineeringOccupancy ProbabilitiesPhysicsTunneling Microscopy	2013	46
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier Luca De Michielis, Livio Lattanzio, Pierpaolo Palestri, EngineeringTunnel-fet ArchitectureSemiconductor PhysicsSeveral TfetsQuantum Engineering	2011	46
Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance Cem Alper, Luca De Michielis, Livio Lattanzio, Solid-State Electronics Device ModelingElectrical EngineeringEngineeringNanoelectronicsElectronic Engineering	2013	38
Ferroelectric transistors with improved characteristics at high temperature Giovanni A. Salvatore, Livio Lattanzio, Didier Bouvet, Applied Physics Letters SemiconductorsElectrical EngineeringSemiconductor DeviceEngineeringFerroelectric Application	2010	35

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