Catherine Erine

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Luca Nela, Nirmana Perera, Catherine Erine et al. · IEEE Transactions on Power Electronics · 2020 · 91 citations · Full text

Wide-bandgap Semiconductor, Room Temperature, Electrical Engineering +15

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Jun Ma, Catherine Erine, Xiang Peng et al. · Applied Physics Letters · 2018 · 65 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +14

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Minghua Zhu, Jun Ma, Luca Nela et al. · IEEE Electron Device Letters · 2019 · 45 citations · Full text

Short Barrier Recess, Semiconductor Technology, Electrical Engineering +10

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Minghua Zhu, Catherine Erine, Jun Ma et al. · IEEE Electron Device Letters · 2020 · 33 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors

Catherine Erine, Jun Ma, Giovanni Santoruvo et al. · IEEE Electron Device Letters · 2020 · 28 citations · Full text

In-plane Gate, Electrical Engineering, Engineering +10