Emmanuel Beraudo

Comparison between Polar (0001) and Semipolar (1122) Nitride Blue–Green Light-Emitting Diodes Grown on c- and m-Plane Sapphire Substrates

P. de Mierry, Tobias Guehne, M. Némoz et al. · Japanese Journal of Applied Physics · 2009 · 61 citations

Wide-bandgap Semiconductor, Semipolar Qws, Engineering +16

On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

Blandine Alloing, S. Vézian, O. Tottereau et al. · Applied Physics Letters · 2011 · 44 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14

GaN microwires as optical microcavities: whispering gallery modes Vs Fabry-Perot modes

Pierre‐Marie Coulon, Maxime Hugues, Blandine Alloing et al. · Optics Express · 2012 · 41 citations · Full text

Wide-bandgap Semiconductor, Optical Materials, Engineering +18

Imaging and counting threading dislocations in c-oriented epitaxial GaN layers

Mario El Khoury, Aimeric Courville, B Poulet et al. · Semiconductor Science and Technology · 2013 · 36 citations

Materials Science, Electrical Engineering, Engineering +14

Hexagonal c-axis GaN layers grown by metalorganic vapor-phase epitaxy on Si(001)

Sylvain Joblot, E. Feltin, Emmanuel Beraudo et al. · Journal of Crystal Growth · 2005 · 21 citations

Materials Engineering, Materials Science, Wide-bandgap Semiconductor +6