Tomohiro Maegawa

Two-million-pixel SOI diode uncooled IRFPA with 15μm pixel pitch

Daisuke Fujisawa, Tomohiro Maegawa, Yasuaki Ohta et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2012 · 31 citations

Engineering, Electrical Engineering, Electronic Materials +13

AlN/AlGaN short-period superlattice sacrificial layers in laser lift-off for vertical-type AlGaN-based deep ultraviolet light emitting diodes

Misaichi Takeuchi, Tomohiro Maegawa, Hiroshi Shimizu et al. · Applied Physics Letters · 2009 · 28 citations

Engineering, Materials Engineering, Materials Science +14

Improvement of Al-Polar AlN Layer Quality by Three-Stage Flow-Modulation Metalorganic Chemical Vapor Deposition

Misaichi Takeuchi, Shin Ooishi, Takumi Ohtsuka et al. · Applied Physics Express · 2008 · 27 citations

Natural Sciences, Materials Engineering, Materials Science +17

Development of new SOI diode structure for beyond 17 μm pixel pitch SOI diode uncooled IRFPAs

Daisuke Takamuro, Tomohiro Maegawa, Takaki Sugino et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2011 · 17 citations

Engineering, Electrical Engineering, Materials Science +12

2-in-1 Diodes with a Contact-Sidewall Structure for Small Pixel Pitch in Silicon-on-Insulator (SOI) Uncooled Infrared (IR) Focal Plane Arrays

Tomohiro Maegawa, Daisuke Fujisawa, Hisatoshi Hata et al. · Sensors and Materials · 2014 · 12 citations · Full text

Engineering, Electrical Engineering, Materials Science +17