A. V. Shaposhnikov - Concepedia

Author

A. V. Shaposhnikov

Institute of Semiconductor Physics

Also Known As

A. Shaposhnikov, A. V. Shaposhnikov, A.V. SHAPOSHNIKOV, A.V. Shaposhnikov, Alexandr V Shaposhnikov

Publications

450

Citations

H-Index

Concepts

All Affiliations

Institute of Semiconductor Physics Russian Academy of Sciences City University of Hong Kong Samsung (South Korea)Boreskov Institute of Catalysis

About

A. V. Shaposhnikov is an author at Institute of Semiconductor Physics specializing in applied physics, physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	5	5	205
2	Engineering	4	4	138
3	Natural Sciences	1	1	14
4	Chemistry	1	1	14
5	Electrical Engineering	1	1	76

A. V. Shaposhnikov

Publications

409

Citations

H-Index

Page 1

	Year	Citations
Electronic structure of α-Al2O3: Ab initio simulations and comparison with experiment Timofey V. Perevalov, A. V. Shaposhnikov, V. A. Gritsenko, Journal of Experimental and Theoretical Physics Letters	2007	97
Mechanism of GeO<sub>2</sub> resistive switching based on the multi-phonon assisted tunneling between traps A. V. Shaposhnikov, Timofey V. Perevalov, V. A. Gritsenko, Applied Physics Letters SemiconductorsOxygen VacancyElectrical EngineeringThermal Trap EnergyEngineering	2012	76
Electronic structure of memory traps in silicon nitride V. A. Gritsenko, S. S. Nekrashevich, A. V. Shaposhnikov Microelectronic Engineering PhysicsMemory TrapsApplied PhysicsSemiconductor Device FabricationSemiconductor Memory	2009	67
Electronic band structure and effective masses of electrons and holes in the α and β phases of silicon nitride A. V. Shaposhnikov, I.P. Petrov, V. A. Gritsenko, Physics of the Solid State	2007	39
Numerical simulation of intrinsic defects in SiO2 and Si3N4 V. A. Gritsenko, Yu. N. Novikov, A. V. Shaposhnikov, Semiconductors	2001	29
Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces V. A. Gritsenko, A. V. Shaposhnikov, Wai‐Ming Kwok, Thin Solid Films EngineeringValence Band OffsetPhysicsNanoelectronicsSilicon Nitride/silicon	2003	29
The atomic and electron structure of ZrO2 A. V. Shaposhnikov, D. V. Gritsenko, I. P. Petrenko, Journal of Experimental and Theoretical Physics	2006	27
Electronic structure of bulk and defect α- and γ-Al2O3 Timofey V. Perevalov, A. V. Shaposhnikov, V. A. Gritsenko Microelectronic Engineering Materials EngineeringMaterials ScienceEngineeringCrystalline DefectsApplied Physics	2009	19
Onefold coordinated oxygen atom: an electron trap in the silicon oxide V. A. Gritsenko, A. V. Shaposhnikov, Yu. N. Novikov, Microelectronics Reliability EngineeringPhysicsNatural SciencesOxide ElectronicsApplied Physics	2003	14
Ab initio simulation of the electronic structure of Ta2O5 crystal modifications Timofey V. Perevalov, A. V. Shaposhnikov Journal of Experimental and Theoretical Physics	2013	12

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