A. V. Shaposhnikov

Electronic structure of α-Al2O3: Ab initio simulations and comparison with experiment

Timofey V. Perevalov, A. V. Shaposhnikov, V. A. Gritsenko et al. · Journal of Experimental and Theoretical Physics Letters · 2007 · 97 citations

Mechanism of GeO₂ resistive switching based on the multi-phonon assisted tunneling between traps

A. V. Shaposhnikov, Timofey V. Perevalov, V. A. Gritsenko et al. · Applied Physics Letters · 2012 · 76 citations

Semiconductors, Oxygen Vacancy, Electrical Engineering +15

Electronic structure of memory traps in silicon nitride

V. A. Gritsenko, S. S. Nekrashevich, A. V. Shaposhnikov · Microelectronic Engineering · 2009 · 67 citations

Physics, Memory Traps, Applied Physics +3

Electronic band structure and effective masses of electrons and holes in the α and β phases of silicon nitride

A. V. Shaposhnikov, I.P. Petrov, V. A. Gritsenko et al. · Physics of the Solid State · 2007 · 39 citations

Numerical simulation of intrinsic defects in SiO2 and Si3N4

V. A. Gritsenko, Yu. N. Novikov, A. V. Shaposhnikov et al. · Semiconductors · 2001 · 29 citations