M. Nishiguchi

Highly reliable Au-Sn eutectic bonding with background GaAs LSI chips

M. Nishiguchi, N. Goto, Hideyuki Nishizawa · IEEE Transactions on Components Hybrids and Manufacturing Technology · 1991 · 35 citations

Materials Science, Materials Engineering, Electrical Engineering +12

A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance

Takeyoshi Masuda, Keiji Wãda, Toru Hiyoshi et al. · Materials science forum · 2014 · 25 citations

Semiconductor Technology, Electrical Engineering, Engineering +11

Precision comparison of surface temperature measurement techniques for GaAs ICs

M. Nishiguchi, Masamichi Fujihara, A. Miki et al. · IEEE Transactions on Components Hybrids and Manufacturing Technology · 1993 · 25 citations

Engineering, Measurement, Education +21

Radiation tolerant GaAs MESFET with a highly-doped thin active layer grown by OMVPE

M. Nishiguchi, T. Hashinaga, Hideyuki Nishizawa et al. · IEEE Transactions on Nuclear Science · 1990 · 15 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +9