A. Arun Goud

GaSb-InAs n-TFET With Doped Source Underlap Exhibiting Low Subthreshold Swing at Sub-10-nm Gate-Lengths

Ankit Sharma, A. Arun Goud, Kaushik Roy · IEEE Electron Device Letters · 2014 · 54 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +15

Source-Underlapped GaSb–InAs TFETs With Applications to Gain Cell Embedded DRAMs

Ankit Sharma, A. Arun Goud, Jaydeep P. Kulkarni et al. · IEEE Transactions on Electron Devices · 2016 · 25 citations

Wide-bandgap Semiconductor, Non-volatile Memory, Engineering +16

Atomistic tight-binding based evaluation of impact of gate underlap on source to drain tunneling in 5 nm gate length Si FinFETs

A. Arun Goud, Sumeet Kumar Gupta, Sri Harsha Choday et al. · 2013 · 17 citations

Electrical Engineering, Leakage Problem, Vlsi Design +14

Asymmetric Underlapped Sub-10-nm n-FinFETs for High-Speed and Low-Leakage 6T SRAMs

A. Arun Goud, Rangharajan Venkatesan, Anand Raghunathan et al. · IEEE Transactions on Electron Devices · 2016 · 15 citations

Device Modeling, Electrical Engineering, Engineering +14

Design space exploration of FinFETs in sub-10nm technologies for energy-efficient near-threshold circuits

Sumeet Kumar Gupta, Woo-Suhl Cho, A. Arun Goud et al. · 2013 · 11 citations

Engineering, Vlsi Design, Energy Efficiency +16