Itsuo Umebu

Atomic Structure of Ordered InGaP Crystals Grown on (001)GaAs Substrates by Metalorganic Chemical Vapor Deposition

Osamu Ueda, M. Takikawa, J. Komeno et al. · Japanese Journal of Applied Physics · 1987 · 134 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +15

Ionization coefficients measured in abrupt InP junctions

Itsuo Umebu, Anwesha Choudhury, P.N. Robson · Applied Physics Letters · 1980 · 100 citations

Semiconductors, Electrons α, Electrical Engineering +12

Direct observation of electron leakage in InGaAsP/InP double heterostructure

Shigenobu Yamakoshi, T. Sanada, Osamu Wada et al. · Applied Physics Letters · 1982 · 56 citations

Optical Materials, Engineering, Optoelectronic Devices +18

TEM investigation of modulated structures and ordered structures in InAlAs crystals grown on (001) InP substrates by molecular beam epitaxy

Osamu Ueda, Toshio Fujii, Yoshinobu Nakada et al. · Journal of Crystal Growth · 1989 · 55 citations

Materials Science, Tem Investigation, Material Analysis +8

Transmission electron microscopic observation of InGaP crystals grown on (001)GaAs substrates by metalorganic chemical vapor deposition

Osamu Ueda, M. Takikawa, Masaru Takechi et al. · Journal of Crystal Growth · 1988 · 52 citations

Electrical Engineering, Epitaxial Growth, Engineering +9