M. Abul Khayer - Concepedia

Author

M. Abul Khayer

University of California, Riverside

Also Known As

M Abul Khayer, M. Abul Khayer, M.A. Khayer, Mohammad Abul Khayer

Publications

342

Citations

H-Index

Concepts

All Affiliations

University of California, Riverside East West University Intel (United States)

About

M. Abul Khayer is an author at University of California, Riverside specializing in engineering, nanoelectronics, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	308
2	Applied Physics	10	10	308
3	Electrical Engineering	10	10	308
4	Physics	9	9	273
5	Condensed Matter Physics	2	2	61

M. Abul Khayer

Publications

330

Citations

H-Index

Page 1

	Year	Citations
Effects of band-tails on the subthreshold characteristics of nanowire band-to-band tunneling transistors M. Abul Khayer, Roger K. Lake Journal of Applied Physics Device ModelingWide-bandgap SemiconductorElectrical EngineeringEngineeringOn-off Current Ratios	2011	67
Material Selection for Minimizing Direct Tunneling in Nanowire Transistors Somaia Sarwat Sylvia, Hong-Hyun Park, M. Abul Khayer, IEEE Transactions on Electron Devices Largest Tunneling MassesWide-bandgap SemiconductorElectrical EngineeringEngineeringTunneling Microscopy	2012	53
Performance of $n$-Type InSb and InAs Nanowire Field-Effect Transistors M. Abul Khayer, Roger K. Lake IEEE Transactions on Electron Devices EngineeringSemiconductor DeviceQuantum EngineeringSemiconductorsHigh-speed Electronics	2008	49
Drive Currents and Leakage Currents in InSb and InAs Nanowire and Carbon Nanotube Band-to-Band Tunneling FETs M. Abul Khayer, Roger K. Lake IEEE Electron Device Letters Device ModelingInas NanowireElectrical EngineeringSemiconductor DeviceEngineering	2009	35
The Quantum and Classical Capacitance Limits of InSb and InAs Nanowire FETs M. Abul Khayer, Roger K. Lake IEEE Transactions on Electron Devices EngineeringPower ElectronicsDelay TimesSemiconductor DeviceRf Semiconductor	2009	26
Diameter dependent performance of high-speed, low-power InAs nanowire field-effect transistors M. Abul Khayer, Roger K. Lake Journal of Applied Physics SemiconductorsDevice ModelingElectrical EngineeringElectronic DevicesInas Nanowire	2010	25
Doping, Tunnel Barriers, and Cold Carriers in InAs and InSb Nanowire Tunnel Transistors Somaia Sarwat Sylvia, M. Abul Khayer, Khairul Alam, IEEE Transactions on Electron Devices	2012	22
Effect of Random, Discrete Source Dopant Distributions on Nanowire Tunnel FETs Somaia Sarwat Sylvia, K. M. Masum Habib, M. Abul Khayer, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringNanowire Tunnel FetsPhysics	2014	19
Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors M. Abul Khayer, Roger K. Lake Journal of Applied Physics Wide-bandgap SemiconductorEngineeringField-effect TransistorsSemiconductor DeviceQuantum Engineering	2010	13
The quantum capacitance limit of high-speed, low-power InSb nanowire field effect transistors M. Abul Khayer, Roger K. Lake Device ModelingSemiconductorsElectrical EngineeringElectronic DevicesQuantum Capacitance Limit	2008	11

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