Joy S. Lee - Concepedia

Author

Joy S. Lee

The University of Texas at Dallas ORCID

Also Known As

Joy S. Lee

Publications

566

Citations

H-Index

Concepts

All Affiliations

The University of Texas at Dallas Texas Instruments (United States)Dow Chemical (United States)Kangwon National University

About

Joy S. Lee is an author at The University of Texas at Dallas specializing in applied physics, thin films, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	4	4	466
2	Applied Physics	4	4	466
3	Materials Science	4	4	466
4	Electrical Engineering	3	3	311
5	Materials Engineering	1	1	286

Joy S. Lee

Publications

562

Citations

H-Index

Page 1

	Year	Citations
Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget Si Joon Kim, Dushyant Narayan, Jae‐Gil Lee, Applied Physics Letters EngineeringLow Thermal BudgetStress-induced CrystallizationAtomic LayerFerroelectric Application	2017	286
Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films Si Joon Kim, Jaidah Mohan, Jaebeom Lee, Applied Physics Letters Materials ScienceDielectric PropertiesEngineeringFerroelectric ApplicationFilm Thickness	2018	155
Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper Harrison Sejoon Kim, Xin Meng, Si Joon Kim, ACS Applied Materials & Interfaces	2018	35
Stress-Induced Crystallization of Thin Hf<sub>1–<i>X</i></sub>Zr<sub><i>X</i></sub>O<sub>2</sub> Films: The Origin of Enhanced Energy Density with Minimized Energy Loss for Lead-Free Electrostatic Energy Storage Applications Si Joon Kim, Jaidah Mohan, Joy S. Lee, ACS Applied Materials & Interfaces	2019	32
Hollow Cathode Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using Pentachlorodisilane Xin Meng, Harrison Sejoon Kim, Antonio T. Lucero, ACS Applied Materials & Interfaces	2018	29
Low temperature (100 °C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si Youngchul Byun, Jae‐Gil Lee, Xin Meng, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringSemiconductor TechnologyEngineering	2017	13
Low Temperature (400&#x000B0;c) Ferroelectric Hf0.5Zr0.5O2 Capacitors for Next-Generation FRAM Applications Si Joon Kim, Dushyant Narayan, Jae‐Gil Lee, Materials ScienceElectrical EngineeringMaterial AnalysisEngineeringFerroelastics	2017	12

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