M. El Kousseifi

Progress in the understanding of Ni silicide formation for advanced<scp>MOS</scp>structures

D. Mangelinck, K. Hoummada, Federico Panciera et al. · physica status solidi (a) · 2014 · 28 citations

Atom probe tomography for advanced metallization

D. Mangelinck, Federico Panciera, K. Hoummada et al. · Microelectronic Engineering · 2013 · 20 citations

Materials Science, Engineering, Electron Microscopy +7

Selection of the first Ni silicide phase by controlling the Pt incorporation in the intermixed layer

M. El Kousseifi, K. Hoummada, M. Bertoglio et al. · Acta Materialia · 2016 · 20 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +9

Ni(Pt)-silicide contacts on CMOS devices: Impact of substrate nature and Pt concentration on the phase formation

Federico Panciera, K. Hoummada, C. Perrin et al. · Microelectronic Engineering · 2013 · 16 citations

Materials Science, Engineering, Physics +11

Direct observation of NiSi lateral growth at the epitaxial θ-Ni2Si/Si(1 0 0) interface

M. El Kousseifi, K. Hoummada, Thierry Épicier et al. · Acta Materialia · 2015 · 15 citations

Oxide Heterostructures, Semiconductor Technology, Nisi Lateral Growth +7