Felix Kaess

New encoding scheme for high-speed flash ADC's

Felix Kaess, Riad Kanan, B. Hochet et al. · 2002 · 89 citations

Electrical Engineering, Digital Converters, Engineering +11

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

Felix Kaess, Seiji Mita, Jingqiao Xie et al. · Journal of Applied Physics · 2016 · 80 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Chemical Engineering +13

Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN

Pramod Reddy, Shun Washiyama, Felix Kaess et al. · Journal of Applied Physics · 2017 · 64 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Point Defects +18

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

Pramod Reddy, Marc P. Hoffmann, Felix Kaess et al. · Journal of Applied Physics · 2016 · 60 citations · Full text

Wide-bandgap Semiconductor, Point Defects, Engineering +18

Defect-free Ni/GaN Schottky barrier behavior with high temperature stability

Pramod Reddy, Biplab Sarkar, Felix Kaess et al. · Applied Physics Letters · 2017 · 41 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13