Donald L. Dorsey

Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

Yuewei Zhang, Adam T. Neal, Zhanbo Xia et al. · Applied Physics Letters · 2018 · 338 citations

Materials Science, Oxide Heterostructures, Semiconductors +14

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Nicholas R. Glavin, Kelson D. Chabak, Eric R. Heller et al. · Advanced Materials · 2017 · 139 citations

Lateral β-Ga₂O₃ field effect transistors

Kelson D. Chabak, Kevin Leedy, Andrew J. Green et al. · Semiconductor Science and Technology · 2019 · 117 citations · Full text

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13

Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors

Sukwon Choi, Eric R. Heller, Donald L. Dorsey et al. · Journal of Applied Physics · 2013 · 104 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +13

Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features

Sukwon Choi, Eric R. Heller, Donald L. Dorsey et al. · IEEE Transactions on Electron Devices · 2013 · 97 citations

High Temperature Materials, Phonon Frequencies, Physics +15