L. W. Kapitan

Carbon doping of GaAs and (In,Ga)As in solid source molecular beam epitaxy using carbon tetrabromide

Kai Zhang, Wen-Yen Hwang, D. L. Miller et al. · Applied Physics Letters · 1993 · 39 citations

Engineering, Materials Engineering, Materials Science +17

Noncontact doping level determination in GaAs using photoreflectance spectroscopy

L. Peters, L. E. Phaneuf, L. W. Kapitan et al. · Journal of Applied Physics · 1987 · 33 citations

Natural Sciences, Materials Science, Physics +17

On the design and characterization of a novel arsine cracking furnace utilizing catalytic decomposition of AsH3 to yield a purely monomeric source of arsenic for molecular beam epitaxial growth of GaAs

L. W. Kapitan, C. W. Litton, Gregory C Clark et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1984 · 14 citations

Engineering, Materials Engineering, Materials Science +15

Vertical integration of an In _0.15 Ga _0.85 As modulation-doped field effect transistor and GaAs laser grown by molecular beam epitaxy

S. D. Offsey, P.J. Tasker, W. J. Schaff et al. · Electronics Letters · 1990 · 11 citations

Engineering, Electrical Engineering, Materials Science +17