Ke-Hua Su

High-temperature threshold characteristics of a symmetrically graded InAlAs∕InxGa1−xAs∕GaAs metamorphic high electron mobility transistor

Chun‐Sing Lee, Y. J. Chen, W. C. Hsu et al. · Applied Physics Letters · 2006 · 18 citations

Engineering, Electrical Engineering, Materials Science +17

Comparison of Al[sub 0.32]Ga[sub 0.68]N∕GaN Heterostructure Field-Effect Transistors with Different Channel Thicknesses

Tzong-Bin Wang, Wei‐Chou Hsu, Jun-Long Su et al. · Journal of The Electrochemical Society · 2007 · 14 citations

Engineering, Electrical Engineering, Materials Science +17

Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning

Yu-Shyan Lin, Dong Huang, W. C. Hsu et al. · Semiconductor Science and Technology · 2006 · 14 citations

Engineering, Electrical Engineering, Materials Science +15

A Novel Dilute Antimony Channel $\hbox{In}_{0.2}\hbox{Ga}_{0.8}\hbox{AsSb}/\hbox{GaAs}$ HEMT

Ke-Hua Su, Wei‐Chou Hsu, Ching-Sung Lee et al. · IEEE Electron Device Letters · 2007 · 13 citations

Engineering, Electrical Engineering, Physics +17