Yu-Shyan Lin

Improved AlGaN/GaN Metal–Oxide– Semiconductor High-Electron Mobility Transistors With TiO₂Gate Dielectric Annealed in Nitrogen

Yu-Shyan Lin, Chi‐Che Lu · IEEE Transactions on Electron Devices · 2018 · 41 citations

Semiconductors, Materials Science, Electrical Engineering +12

Temperature Dependence of Current Gain, Ideality Factor, and Offset Voltage of AlGaAs/GaAs and InGaP/GaAs HBTs

Yu-Shyan Lin, Jia-Jhen Jiang · IEEE Transactions on Electron Devices · 2009 · 35 citations

Electrical Engineering, Semiconductor Device, Engineering +12

Characteristics of In<tex>$_0.425$</tex>Al<tex>$_0.575$</tex>As–InxGa<tex>$_1-x$</tex>As Metamorphic HEMTs With Pseudomorphic and Symmetrically Graded Channels

W. C. Hsu, Yi‐Jane Chen, Chun‐Sing Lee et al. · IEEE Transactions on Electron Devices · 2005 · 34 citations

Electrical Engineering, Symmetrically Graded Channels, Engineering +10

Performance Improvement in Tensile-Strained$hbox In_0.5hbox Al_0.5hbox As/hbox In_xhbox Ga_1-xhbox As/hbox In_0.5hbox Al_0.5hbox As$Metamorphic HEMT

W. C. Hsu, Dong-Hai Huang, Yu-Shyan Lin et al. · IEEE Transactions on Electron Devices · 2006 · 26 citations

Materials Science, Tensile-strained Channel, Engineering +10

Mobility Enhancement and Breakdown Behavior in InP-Based Heterostructure Field-effect Transistor

Yu-Shyan Lin · Journal of The Electrochemical Society · 2005 · 19 citations

Semiconductors, Conventional Hfets, Electrical Engineering +10