A. Raizman

Compound formation at the interaction of Pd with strained layers of Si1−<i>x</i>Ge<i>x</i> epitaxially grown on Si(100)

A. Buxbaum, M. Eizenberg, A. Raizman et al. · Applied Physics Letters · 1991 · 44 citations

Natural Sciences, Materials Engineering, Materials Science +17

Crystalline perfection of melt-grown CdTe

M. Azoulay, A. Raizman, G. Gafni et al. · Journal of Crystal Growth · 1990 · 43 citations

Natural Sciences, Materials Engineering, Materials Science +14

Determining the [001] crystal orientation of CdTe layers grown on (001) GaAs

Hadas Shtrikman, M. Oron, A. Raizman et al. · Journal of Electronic Materials · 1988 · 41 citations

Natural Sciences, Materials Engineering, Materials Science +12

The effect of growth orientation on the morphology, composition, and growth rate of mercury cadmium telluride layers grown by metalorganic vapor phase epitaxy

G. Cinader, A. Raizman, A. Sher · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +16

In As Sb ∕ Ga Sb heterostructure based mid-wavelength-infrared detector for high temperature operation

Yaakov Sharabani, Yossi Paltiel, A. Sher et al. · Applied Physics Letters · 2007 · 33 citations

Engineering, Electrical Engineering, Materials Science +17