Concepedia

A. Buxbaum

AB

Statistics

Publications

6

Citations

132

H-Index

6

Active since

1990

Affiliations

Technion – Israel Institute of Technology(Current)

Soreq Nuclear Research Center

Daimler (Germany)

Israel Atomic Energy Commission

A. Buxbaum is an author at Technion – Israel Institute of Technology specializing in materials engineering, materials science, and silicon epitaxy.

Publications per year

1990–2012

6

Publications

6

Compound formation at the interaction of Pd with strained layers of Si1−<i>x</i>Ge<i>x</i> epitaxially grown on Si(100)

A. Buxbaum, M. Eizenberg, A. Raizman et al. · Applied Physics Letters · 1991 · 44 citations

Natural Sciences, Materials Engineering, Materials Science +17

Three-dimensional chemical imaging of embedded nanoparticles using atom probe tomography

Satyanarayana V. N. T. Kuchibhatla, V. Shutthanandan, Ty J. Prosa et al. · Nanotechnology · 2012 · 23 citations

Natural Sciences, Materials Engineering, Materials Science +16

Epitaxial growth of single-crystal Si1−xGex on Si(100) by ion beam sputter deposition

F. Meyer, C. Schwebel, Claude Pellet et al. · Thin Solid Films · 1990 · 23 citations

Natural Sciences, Materials Engineering, Materials Science +16

Strain relaxation in epitaxial Si1−xGex/Si(100) layers induced by reaction with palladium

A. Buxbaum, E. Zolotoyabko, M. Eizenberg et al. · Thin Solid Films · 1992 · 16 citations

Natural Sciences, Materials Engineering, Materials Science +14

Interaction of Pd with Strained Layers of Si<sub>1-x</sub>Ge<sub>x</sub> Epitaxially Grown on Si(100)

A. Buxbaum, M. Eizenberg, A. Raizman et al. · Japanese Journal of Applied Physics · 1991 · 16 citations · Full text

Engineering, Materials Engineering, Materials Science +17

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