H. Gan

Polarity effect of electromigration on kinetics of intermetallic compound formation in Pb-free solder V-groove samples

H. Gan, K. N. Tu · Journal of Applied Physics · 2005 · 264 citations · Full text

Engineering, Imc Formation, Cu Electrodes +16

3-D Silicon Integration and Silicon Packaging Technology Using Silicon Through-Vias

John Knickerbocker, C.S. Patel, Paul Andry et al. · IEEE Journal of Solid-State Circuits · 2006 · 182 citations

Engineering, Vlsi Design, Device Integration +19

Characterization of Micro-Bump C4 Interconnects for Si-Carrier SOP Applications

S. L. Wright, R. Polastre, H. Gan et al. · 2006 · 91 citations

Materials Engineering, Electrical Engineering, Chip-scale Package +14

Electromigration in solder joints and solder lines

H. Gan, Woon‐Seop Choi, Ge Xu et al. · JOM · 2002 · 72 citations

Electrometallurgy, Electrical Engineering, Electromigration Technique +7

Pb-free Micro-joints (50 um pitch) for the Next Generation Micro-systems: the Fabrication, Assembly and Characterization

H. Gan, S. L. Wright, R. Polastre et al. · 2006 · 39 citations

Engineering, Mechanical Engineering, Microactuator +22